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КП753Б

КП753, КП753А, КП753Б, КП753В

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Description

Parameters

ParameterКП753АКП753БКП753В
Noise factor
NF
Power dissipation
P
<74 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<500 V<450 V<500 V
Continuous drain current
IDSS
<4.5 A<4.5 A<4 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.5 Ω<1.5 Ω<2 Ω