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КП751А

КП751, КП751А, КП751Б, КП751В

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Description

Parameters

ParameterКП751АКП751БКП751В
Noise factor
NF
Power dissipation
P
<50 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<400 V<350 V<400 V
Continuous drain current
IDSS
<3.3 A<3.3 A<2.8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.8 Ω<1.8 Ω<2.5 Ω