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КП750

КП750, КП750А, КП750Б, КП750В, КП750Г

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Description

Parameters

ParameterКП750АКП750БКП750ВКП750Г
Noise factor
NF
Power dissipation
P
<125 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<200 V<150 V<200 V<200 V
Continuous drain current
IDSS
<18 A<18 A<16 A<18 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<180 mΩ<180 mΩ<220 mΩ<180 mΩ