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КП749Б

КП749, КП749А, КП749Б, КП749В

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Description

Parameters

ParameterКП749АКП749БКП749В
Noise factor
NF
Power dissipation
P
<50 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<200 V<150 V<200 V
Continuous drain current
IDSS
<5.2 A<5.2 A<4 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<800 mΩ<800 mΩ<1.2 Ω