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КП745А

КП745, КП745А, КП745Б, КП745В, КП745Г

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Description

Parameters

ParameterКП745АКП745БКП745ВКП745Г
Noise factor
NF
Power dissipation
P
<88 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<100 V<80 V<100 V<100 V
Continuous drain current
IDSS
<14 A<14 A<12 A<15 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩ<160 mΩ<230 mΩ<220 mΩ