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КП741Б

КП741, КП741А, КП741Б

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Description

Parameters

ParameterКП741АКП741Б
Noise factor
NF
Power dissipation
P
<190 W<150 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<60 V<50 V
Continuous drain current
IDSS
<50 A(not set)
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<18 mΩ<24 mΩ