КП740А

КП740, КП740А, КП740Б, КП740В

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Description

Parameters

ParameterКП740АКП740БКП740В
Noise factor
NF
Power dissipation
P
<60 W
Slope of a field effect transistor
S1-S2/I
>5800при Iс = 6.0 А
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
1.4 nF
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<60 V<50 V<60 V
Continuous drain current
IDSS
<17 A<17 A<14 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<550 mΩ<550 mΩ<120 mΩ
Pulse drain current
IDSS-I
<40 A