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КП739А

КП739, КП739А, КП739Б, КП739В

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Description

Parameters

ParameterКП739АКП739БКП739В
Noise factor
NF
Power dissipation
P
<43 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<60 V<50 V<60 V
Continuous drain current
IDSS
<10 A<10 A<8.3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩ<200 mΩ<300 mΩ