КП733А
КП733, КП733А, КП733Б, КП733В1
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КП733А | КП733Б | КП733В1 | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <125 W | <125 W | (not set) |
Slope of a field effect transistor | S1-S2/I | >500при Iс = 1.0 А | ||
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В | ||
Input capacitance of field effect transistor | Ciss | 400 pF | ||
Feedthrough capacitance | C12 | 15 pF | ||
Continuous voltage between gate and source | UGS | <20 V | ||
Continuous voltage between drain and source | UDSS | <400 V | <400 V | <550 V |
Continuous drain current | IDSS | <1.5 A | <1.5 A | <500 mA |
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <3.6 Ω | <3.6 Ω | (not set) |
Pulse drain current | IDSS-I | <6 A | <6 A | <2 A |