КП733
КП733, КП733А, КП733Б, КП733В1
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Description
Parameters
| Parameter | КП733А | КП733Б | КП733В1 | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <125 W | <125 W | (not set) |
Slope of a field effect transistor | S1-S2/I | >500при Iс = 1.0 А | ||
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В | ||
Input capacitance of field effect transistor | Ciss | 400 pF | ||
Feedthrough capacitance | C12 | 15 pF | ||
Continuous voltage between gate and source | UGS | <20 V | ||
Continuous voltage between drain and source | UDSS | <400 V | <400 V | <550 V |
Continuous drain current | IDSS | <1.5 A | <1.5 A | <500 mA |
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <3.6 Ω | <3.6 Ω | (not set) |
Pulse drain current | IDSS-I | <6 A | <6 A | <2 A |