2П712Б

2П712, 2П712А, 2П712Б, 2П712В

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Description

Parameters

Parameter		2П712А	2П712Б	2П712В
Noise factor	N_F
Power dissipation	P	<50 W
Slope of a field effect transistor	S1-S2/I	>2000при Iс = 2 А	>2000при Iс = 2 А	>1800при Iс = 2 А
Gate leakage current with connected drain and source	I_G
Input capacitance of field effect transistor	C_iss	1.8 nF
Continuous voltage between gate and drain	U_GD	<80 V	<100 V	<100 V
Continuous voltage between gate and source	U_GS	<20 V
Continuous voltage between drain and source	U_DSS	<80 V	<100 V	<100 V
Continuous drain current	I_DSS	<10 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	P-ch
Channel resistance at ON state	R_DS-ON	<250 mΩ	<300 mΩ	<400 mΩ
Pulse drain current	I_DSS-I	<30 A