Доход от майнинга

2П712

2П712, 2П712А, 2П712Б, 2П712В

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2П712А2П712Б2П712В
Noise factor
NF
Power dissipation
P
<50 W
Slope of a field effect transistor
S1-S2/I
>2000при Iс = 2 А >2000при Iс = 2 А >1800при Iс = 2 А
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
1.8 nF
Continuous voltage between gate and drain
UGD
<80 V<100 V<100 V
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<80 V<100 V<100 V
Continuous drain current
IDSS
<10 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<250 mΩ<300 mΩ<400 mΩ
Pulse drain current
IDSS-I
<30 A