КП709Б
КП709, КП709А, КП709Б
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Description
Parameters
| Parameter | КП709А | КП709Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <75 W | |
Slope of a field effect transistor | S1-S2/I | >2000при Iс = 2 А | |
Gate leakage current with connected drain and source | IG | 1 µA | |
Input capacitance of field effect transistor | Ciss | 650 pF | |
Feedthrough capacitance | C12 | 70 pF | |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <600 V | |
Continuous drain current | IDSS | <4 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <2 Ω | <2.5 Ω |