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2П706

2П706, 2П706А, 2П706Б, 2П706В

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Description

Parameters

Parameter2П706А2П706Б2П706В
Noise factor
NF
Power dissipation
P
<100 W
Slope of a field effect transistor
S1-S2/I
>1500при Iс = 2 А
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and drain
UGD
<510 V<410 V<410 V
Continuous voltage between gate and source
UGS
<30 V
Continuous voltage between drain and source
UDSS
<500 V<400 V<400 V
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<800 mΩ<500 mΩ<650 mΩ