КП705Б
КП705, КП705А, КП705Б, КП705В
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Description
Parameters
| Parameter | КП705А | КП705Б | КП705В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <125 W | ||
Slope of a field effect transistor | S1-S2/I | >1000при Iс = 2 А | ||
Gate leakage current with connected drain and source | IG | |||
Input capacitance of field effect transistor | Ciss | 1.7 nF | ||
Feedthrough capacitance | C12 | 20 pF | ||
Continuous voltage between gate and drain | UGD | <1.01 kV | <810 V | <810 V |
Continuous voltage between gate and source | UGS | <30 V | ||
Continuous voltage between drain and source | UDSS | <1 kV | <800 V | <800 V |
Continuous drain current | IDSS | <5.4 A | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <4.3 Ω | <3.3 Ω | <3.3 Ω |