КП704
КП704, КП704А, КП704Б
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Description
Parameters
| Parameter | КП704А | КП704Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <75 W | |
Slope of a field effect transistor | S1-S2/I | 1000 ~ 2500при Iс = 1 А | |
Gate leakage current with connected drain and source | IG | 1 µA | |
Input capacitance of field effect transistor | Ciss | 1.35 nF | |
Feedthrough capacitance | C12 | 100 pF | |
Continuous voltage between gate and drain | UGD | <200 V | |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <200 V | |
Continuous drain current | IDSS | <10 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <350 mΩ | <500 mΩ |
Pulse drain current | IDSS-I | <30 A | |