КП703Б
КП703, КП703А, КП703Б
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Description
Parameters
| Parameter | КП703А | КП703Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <60 W | |
Slope of a field effect transistor | S1-S2/I | 800 ~ 1200при Iс = 1 А | >800при Iс = 1 А |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 1.5 nF | |
Feedthrough capacitance | C12 | 30 pF | |
Continuous voltage between gate and drain | UGD | <160 V | <110 V |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <150 V | <100 V |
Continuous drain current | IDSS | <12 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <1.1 Ω | <900 mΩ |