КП702
КП702, КП702А
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Description
Parameters
| Parameter | КП702А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <50 W |
Slope of a field effect transistor | S1-S2/I | 800 ~ 2100при Iс = 2.5 А |
Gate leakage current with connected drain and source | IG | |
Input capacitance of field effect transistor | Ciss | 950 pF |
Feedthrough capacitance | C12 | 7 pF |
Continuous voltage between gate and drain | UGD | <310 V |
Continuous voltage between gate and source | UGS | <30 V |
Continuous voltage between drain and source | UDSS | <300 V |
Continuous drain current | IDSS | <8 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <1 Ω |