КП701Б
КП701, КП701А, КП701Б
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Description
Parameters
| Parameter | КП701А | КП701Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <40 W | |
Slope of a field effect transistor | S1-S2/I | 800 ~ 2100при Iс = 2.5 А | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 1.2 nF | |
Feedthrough capacitance | C12 | 30 pF | |
Continuous voltage between gate and drain | UGD | <510 V | <410 V |
Continuous voltage between gate and source | UGS | <25 V | |
Continuous voltage between drain and source | UDSS | <500 V | <400 V |
Continuous drain current | IDSS | <5 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <3.5 Ω | <2.8 Ω |