КП640
КП640
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Description
Parameters
| Parameter | КП640 | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <125 W |
Slope of a field effect transistor | S1-S2/I | >6700при Iс = 11 А |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В |
Input capacitance of field effect transistor | Ciss | 1.6 nF |
Continuous voltage between gate and source | UGS | <20 V |
Continuous voltage between drain and source | UDSS | <200 V |
Continuous drain current | IDSS | <18 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <180 mΩ |
Pulse drain current | IDSS-I | <72 A |