КП510
КП510
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Description
Parameters
| Parameter | КП510 | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <43 W |
Slope of a field effect transistor | S1-S2/I | >1300при Iс = 3.4 А |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В |
Continuous voltage between gate and source | UGS | <20 V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <6 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <540 mΩ |
Pulse drain current | IDSS-I | <20 A |