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2П609А

2П609, 2П609А, 2П609Б

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Description

Parameters

Parameter2П609А2П609Б
Noise factor
NF
5 dBпри f = 0.4 ГГц
Power dissipation
P
<1.2 W
Slope of a field effect transistor
S1-S2/I
>30>25
Gate leakage current with connected drain and source
IG
1 nA
Input capacitance of field effect transistor
Ciss
10 pF
Feedthrough capacitance
C12
3.2 pF
Continuous voltage between drain and source
UDSS
<25 V<20 V
Continuous drain current
IDSS
<190 mA<110 mA
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch