2П609
2П609, 2П609А, 2П609Б
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | 2П609А | 2П609Б | |
|---|---|---|---|
Noise factor | NF | 5 dBпри f = 0.4 ГГц | |
Power dissipation | P | <1.2 W | |
Slope of a field effect transistor | S1-S2/I | >30 | >25 |
Gate leakage current with connected drain and source | IG | 1 nA | |
Input capacitance of field effect transistor | Ciss | 10 pF | |
Feedthrough capacitance | C12 | 3.2 pF | |
Continuous voltage between drain and source | UDSS | <25 V | <20 V |
Continuous drain current | IDSS | <190 mA | <110 mA |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |