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3П608Б-2

3П608, 3П608А-2, 3П608Б-2, 3П608В-2, 3П608Г-2, 3П608Д-2, 3П608Е-2

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Description

Parameters

Parameter3П608А-23П608Б-23П608В-23П608Г-23П608Д-23П608Е-2
Noise factor
NF
Slope of a field effect transistor
S1-S2/I
15 ~ 30при Iс = 0.05 А 20 ~ 60при Iс = 0.1 А 20 ~ 95при Iс = 0.1 А >20при Iс = 0.1 А >20при Iс = 0.1 А >20при Iс = 0.1 А
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<3 V
Continuous voltage between drain and source
UDSS
<7 V
Power dissipation with heatsink
PHS
<600 mW<1.1 W<1 W<1 W<1 W<1 W
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch