3П607А-2
3П607, 3П607А-2
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Description
Parameters
| Parameter | 3П607А-2 | |
|---|---|---|
Noise factor | NF | |
Slope of a field effect transistor | S1-S2/I | 80 ~ 400при Uси = 3 В |
Initial drain current of the field effect transistor | I01-I02 | 800 mA ~ 1.6 A |
Gate leakage current with connected drain and source | IG | |
Continuous voltage between gate and source | UGS | <5 V |
Continuous voltage between drain and source | UDSS | <8 V |
Power dissipation with heatsink | PHS | <3.5 W |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |