3П606
3П606, 3П606А-2, 3П606Б-2, 3П606В-2
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Description
Parameters
| Parameter | 3П606А-2 | 3П606Б-2 | 3П606В-2 | |
|---|---|---|---|---|
Noise factor | NF | |||
Slope of a field effect transistor | S1-S2/I | 70 ~ 150при Iс = 0.25 А | 90 ~ 150при Iс = 0.25 А | 100 ~ 160при Iс = 0.25 А |
Initial drain current of the field effect transistor | I01-I02 | >500 mA | ||
Gate leakage current with connected drain and source | IG | 50 µA | ||
Continuous voltage between gate and source | UGS | <3.5 V | ||
Continuous voltage between drain and source | UDSS | <8 V | ||
Power dissipation with heatsink | PHS | <2 W | ||
Technology of field-effect transistor | Technology | Schottky | ||
FET channel type | Channel | N-ch | ||