3П605
3П605, 3П605А-2
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Description
Parameters
| Parameter | 3П605А-2 | |
|---|---|---|
Noise factor | NF | 3.5 dBпри f = 8 ГГц |
Power dissipation | P | <450 mW |
Slope of a field effect transistor | S1-S2/I | >30при Iс = 0.03 А |
Initial drain current of the field effect transistor | I01-I02 | >150 mA |
Gate leakage current with connected drain and source | IG | 10 µA |
Continuous voltage between gate and drain | UGD | <8 V |
Continuous voltage between gate and source | UGS | <4 V |
Continuous voltage between drain and source | UDSS | <6 V |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |