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3П604Б-2

3П604, 3П604А-2, 3П604Б-2, 3П604В-2, 3П604Г-2

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Description

Parameters

Parameter3П604А-23П604Б-23П604В-23П604Г-2
Noise factor
NF
Power dissipation
P
<900 mW<900 mW<500 mW<500 mW
Slope of a field effect transistor
S1-S2/I
>20при Iс = 0.1 А >15при Iс = 0.1 А >10при Iс = 0.1 А >10при Iс = 0.1 А
Gate leakage current with connected drain and source
IG
20 µA
Continuous voltage between gate and source
UGS
<3 V
Continuous voltage between drain and source
UDSS
<8 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch