3П603Б2
3П603, 3П603А2, 3П603Б2
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Description
Parameters
| Parameter | 3П603А2 | 3П603Б2 | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <2.5 W | |
Slope of a field effect transistor | S1-S2/I | 50 ~ 180при Iс = 0.4 А | 80 ~ 180при Iс = 0.4 А |
Gate leakage current with connected drain and source | IG | 100 µA | |
Continuous voltage between gate and source | UGS | <3.5 V | |
Continuous voltage between drain and source | UDSS | <8 V | |
Technology of field-effect transistor | Technology | Schottky | |
FET channel type | Channel | N-ch | |