3П603
3П603, 3П603А2, 3П603Б2
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | 3П603А2 | 3П603Б2 | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <2.5 W | |
Slope of a field effect transistor | S1-S2/I | 50 ~ 180при Iс = 0.4 А | 80 ~ 180при Iс = 0.4 А |
Gate leakage current with connected drain and source | IG | 100 µA | |
Continuous voltage between gate and source | UGS | <3.5 V | |
Continuous voltage between drain and source | UDSS | <8 V | |
Technology of field-effect transistor | Technology | Schottky | |
FET channel type | Channel | N-ch | |