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АП602Б-2

АП602, АП602А-2, АП602Б-2, АП602В-2, АП602Г-2, АП602Д-2

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Description

Parameters

ParameterАП602А-2АП602Б-2АП602В-2АП602Г-2АП602Д-2
Noise factor
NF
Power dissipation
P
<900 mW<900 mW<900 mW<1.8 W<1.8 W
Slope of a field effect transistor
S1-S2/I
>20при Uси = 3 В>20при Uси = 3 В>20при Uси = 3 В>40при Uси = 3 В>40при Uси = 3 В
Gate leakage current with connected drain and source
IG
300 µA300 µA300 µA600 µA600 µA
Continuous voltage between gate and source
UGS
<3.5 V
Continuous voltage between drain and source
UDSS
<7 V<7 V<7 V<7.5 V<7.5 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch