КП601
КП601, КП601А, КП601Б, 2П601А-9
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Description
Parameters
| Parameter | КП601А | КП601Б | 2П601А-9 | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 0.4 ГГц | 6 dB | 6 dBпри f = 0.4 ГГц |
Power dissipation | P | <500 mW | <500 mW | <1 W |
Slope of a field effect transistor | S1-S2/I | 50 ~ 87при Uси = 10 В | ||
Initial drain current of the field effect transistor | I01-I02 | >400 mAпри U = 10 В | ||
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 15В | ||
Input capacitance of field effect transistor | Ciss | 6 pF | ||
Feedthrough capacitance | C12 | 6 pF | ||
Continuous voltage between gate and drain | UGD | <20 V | ||
Continuous voltage between gate and source | UGS | <15 V | ||
Continuous voltage between drain and source | UDSS | <20 V | ||
Power dissipation with heatsink | PHS | <2 W | <2 W | (not set) |
Technology of field-effect transistor | Technology | JFET | ||
FET channel type | Channel | N-ch | ||