КП505Б
КП505, КП505А, КП505Б, КП505В, КП505Г
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Description
Parameters
| Parameter | КП505А | КП505Б | КП505В | КП505Г | |
|---|---|---|---|---|---|
Noise factor | NF | ||||
Power dissipation | P | <1 W | <1 W | <1 W | <700 mW |
Slope of a field effect transistor | S1-S2/I | >500 | >500 | >500 | (not set) |
Gate leakage current with connected drain and source | IG | ||||
Continuous voltage between gate and source | UGS | <10 V | |||
Continuous voltage between drain and source | UDSS | <50 V | <50 V | <60 V | <8 V |
Continuous drain current | IDSS | <1.4 A | |||
Technology of field-effect transistor | Technology | MOSFET | |||
Channel resistance at ON state | RDS-ON | (not set) | (not set) | (not set) | <1.2 Ω |