КП504
КП504, КП504А, КП504Б
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Description
Parameters
| Parameter | КП504А | КП504Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <1 W | |
Slope of a field effect transistor | S1-S2/I | >140 | |
Gate leakage current with connected drain and source | IG | ||
Continuous voltage between gate and source | UGS | <10 V | |
Continuous voltage between drain and source | UDSS | <240 V | |
Continuous drain current | IDSS | <250 mA | |
Technology of field-effect transistor | Technology | MOSFET | |