КП502А
КП502, КП502А
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Description
Parameters
| Parameter | КП502А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <1 W |
Slope of a field effect transistor | S1-S2/I | >100 |
Gate leakage current with connected drain and source | IG | |
Continuous voltage between gate and source | UGS | <10 V |
Continuous voltage between drain and source | UDSS | <400 V |
Continuous drain current | IDSS | <120 mA |
Technology of field-effect transistor | Technology | MOSFET |