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КП501Б

КП501, КП501А, КП501Б, КП501В

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Description

Parameters

ParameterКП501АКП501БКП501В
Noise factor
NF
Power dissipation
P
<500 mW
Slope of a field effect transistor
S1-S2/I
>100при Iс = 0.25 А
Gate leakage current with connected drain and source
IG
20 nAпри Uсз = 20В20 nAпри Uсз = 20В
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<240 V<200 V<200 V
Continuous drain current
IDSS
<180 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch