КП364Б
КП364, КП364А, КП364Б, КП364В, КП364Г, КП364Д, КП364Е, КП364Ж, КП364И
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Description
Parameters
| Parameter | КП364А | КП364Б | КП364В | КП364Г | КП364Д | КП364Е | КП364Ж | КП364И | |
|---|---|---|---|---|---|---|---|---|---|
Noise factor | NF | ||||||||
Power dissipation | P | <200 mW | |||||||
Slope of a field effect transistor | S1-S2/I | >1 | >1 | >2 | >3 | >2.6 | >4 | >1 | (not set) |
Initial drain current of the field effect transistor | I01-I02 | 500 mA ~ 2.5 A | 500 mA ~ 2.5 A | 1.5 A ~ 5 A | 3 A ~ 12 A | 3 A ~ 9 A | 5 A ~ 20 A | 300 mA ~ 3 A | (not set) |
Gate leakage current with connected drain and source | IG | 1 nA | 1 nA | 1 nA | 100 pA | 1 nA | 1 nA | 5 nA | 5 nA |
Continuous voltage between drain and source | UDSS | <25 V | |||||||
Technology of field-effect transistor | Technology | JFET | |||||||
FET channel type | Channel | N-ch | |||||||