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| Parameter | АП358А-5 | АП358Б-5 | АП358В-5 | |
|---|---|---|---|---|
Noise factor | NF | 5.5 dBпри f = 37 ГГц | 4.3 dBпри f = 37 ГГц | 3.4 dBпри f = 37 ГГц |
Power dissipation | P | <30 mW | ||
Slope of a field effect transistor | S1-S2/I | >8 | ||
Gate leakage current with connected drain and source | IG | 300 nAпри Uсз = 1.5В | ||
Continuous voltage between gate and drain | UGD | <4.5 V | ||
Continuous voltage between gate and source | UGS | <2 V | ||
Continuous voltage between drain and source | UDSS | <3.5 V | ||
Continuous drain current | IDSS | <8 mA | ||
FET channel type | Channel | N-ch | ||