АП356
АП356, АП356А-5, АП356Б-5, АП356В-5
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Description
Parameters
| Parameter | АП356А-5 | АП356Б-5 | АП356В-5 | |
|---|---|---|---|---|
Noise factor | NF | 2 dBпри f = 12 ГГц | 1.8 dBпри f = 12 ГГц | 1.5 dBпри f = 12 ГГц |
Power dissipation | P | <45 mW | ||
Slope of a field effect transistor | S1-S2/I | >20 | ||
Gate leakage current with connected drain and source | IG | 300 nAпри Uсз = 1.5В | ||
Continuous voltage between gate and drain | UGD | <5 V | ||
Continuous voltage between gate and source | UGS | <2.5 V | ||
Continuous voltage between drain and source | UDSS | <3.5 V | ||
Continuous drain current | IDSS | (not set) | <15 mA | <15 mA |
FET channel type | Channel | N-ch | ||