АП355
АП355, АП355А-5, АП355Б-5, АП355В-5
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | АП355А-5 | АП355Б-5 | АП355В-5 | |
|---|---|---|---|---|
Noise factor | NF | 1.5 dBпри f = 8 ГГц | 1.3 dBпри f = 8 ГГц | 1 dBпри f = 8 ГГц |
Power dissipation | P | <70 mW | ||
Slope of a field effect transistor | S1-S2/I | >30 | ||
Gate leakage current with connected drain and source | IG | 300 nAпри Uсз = 1.5В | ||
Continuous voltage between gate and drain | UGD | <5 V | ||
Continuous voltage between gate and source | UGS | <2.5 V | ||
Continuous voltage between drain and source | UDSS | <3.5 V | ||
Continuous drain current | IDSS | (not set) | <20 mA | <20 mA |
FET channel type | Channel | N-ch | ||