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| Parameter | АП354А-5 | АП354Б-5 | АП354В-5 | |
|---|---|---|---|---|
Noise factor | NF | 1 dBпри f = 3.6 ГГц | 800 mdBпри f = 3.6 ГГц | 600 mdBпри f = 3.6 ГГц |
Power dissipation | P | <100 mW | ||
Slope of a field effect transistor | S1-S2/I | >50 | ||
Gate leakage current with connected drain and source | IG | 300 nAпри Uсз = 1.5В | ||
Continuous voltage between gate and drain | UGD | <5 V | ||
Continuous voltage between gate and source | UGS | <2.5 V | ||
Continuous voltage between drain and source | UDSS | <3.5 V | ||
Continuous drain current | IDSS | (not set) | <40 mA | <40 mA |
FET channel type | Channel | N-ch | ||