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| Parameter | 2П352А | 2П352Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <300 mW | |
Slope of a field effect transistor | S1-S2/I | >4при Uси = 10 В | |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 15В | |
Input capacitance of field effect transistor | Ciss | 6 pF | |
Continuous voltage between gate and drain | UGD | <25 V | |
Continuous voltage between gate and source | UGS | <25 V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <40 mA | |
FET channel type | Channel | N-ch | |