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| Parameter | 3П351А-2 | 3П351А1-2 | |
|---|---|---|---|
Noise factor | NF | 4.5 dBпри f = 12 ГГц | 5.5 dBпри f = 17 ГГц |
Power dissipation | P | <75 mW | |
Slope of a field effect transistor | S1-S2/I | >8при Iс = 10 мА | |
Gate leakage current with connected drain and source | IG | 1 µAпри Uсз = 2.5В | |
Continuous voltage between gate and drain | UGD | <9 V | |
Continuous voltage between gate and source | UGS | <9 V | |
Continuous voltage between drain and source | UDSS | <5.5 V | |
Technology of field-effect transistor | Technology | Schottky | |
FET channel type | Channel | N-ch | |