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| Parameter | КП350А | КП350Б | КП350В | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 0.4 ГГц | 6 dBпри f = 0.1 ГГц | 8 dBпри f = 0.4 ГГц |
Power dissipation | P | <150 W | ||
Slope of a field effect transistor | S1-S2/I | >10000при Iс = 25 А | ||
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В | ||
Input capacitance of field effect transistor | Ciss | 2.6 nF | ||
Feedthrough capacitance | C12 | 0.07 pF | ||
Continuous voltage between gate and drain | UGD | <21 V | ||
Continuous voltage between gate and source | UGS | <20 V | ||
Continuous voltage between drain and source | UDSS | <400 V | ||
Continuous drain current | IDSS | <14 mA | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <300 mΩ | ||
Pulse drain current | IDSS-I | <56 A | ||