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Parameter | 3П348А-2 | |
---|---|---|
Noise factor | NF | 1 dB |
Power dissipation | P | <200 mW |
Slope of a field effect transistor | S1-S2/I | >15 |
Gate leakage current with connected drain and source | IG | 1 µA |
Continuous voltage between gate and source | UGS | <4 V |
Continuous voltage between drain and source | UDSS | <5 V |
FET channel type | Channel | N-ch |