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3П348А-2

3П348, 3П348А-2

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Description

Parameters

Parameter3П348А-2
Noise factor
NF
1 dB
Power dissipation
P
<200 mW
Slope of a field effect transistor
S1-S2/I
>15
Gate leakage current with connected drain and source
IG
1 µA
Continuous voltage between gate and source
UGS
<4 V
Continuous voltage between drain and source
UDSS
<5 V
FET channel type
Channel
N-ch