КП346Б-9
КП346, КП346А-9, КП346Б-9, КП346В-9
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Description
Parameters
| Parameter | КП346А-9 | КП346Б-9 | КП346В-9 | |
|---|---|---|---|---|
Noise factor | NF | 3.5 dBпри f = 0.8 ГГц | 4.5 dBпри f = 0.8 ГГц | 1.9 dBпри f = 0.2 ГГц |
Power dissipation | P | <200 mW | ||
Slope of a field effect transistor | S1-S2/I | >12при Iс = 10 мА | >12при Iс = 10 мА | >10при Iс = 10 мА |
Initial drain current of the field effect transistor | I01-I02 | <20 Aпри U = 10 В | ||
Gate leakage current with connected drain and source | IG | 50 nAпри Uсз = 5В | ||
Input capacitance of field effect transistor | Ciss | 2.6 pF | 3 pF | 2.6 pF |
Feedthrough capacitance | C12 | 0.035 pF | 0.045 pF | 0.035 pF |
Continuous voltage between gate and drain | UGD | <16 V | ||
Continuous voltage between gate and source | UGS | <16 V | ||
Continuous voltage between drain and source | UDSS | <14 V | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||