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3П345А-2

3П345, 3П345А-2

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Description

Parameters

Parameter3П345А-2
Noise factor
NF
Power dissipation
P
<80 mW
Slope of a field effect transistor
S1-S2/I
15 ~ 27при Iс = 20 мА
Initial drain current of the field effect transistor
I01-I02
20 A ~ 60 Aпри U = 2 В
Gate leakage current with connected drain and source
IG
100 nAпри Uсз = 2В
Input capacitance of field effect transistor
Ciss
0.35 pF
Continuous voltage between gate and source
UGS
<2 V
Continuous voltage between drain and source
UDSS
<4 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch