3П345
3П345, 3П345А-2
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Description
Parameters
| Parameter | 3П345А-2 | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <80 mW |
Slope of a field effect transistor | S1-S2/I | 15 ~ 27при Iс = 20 мА |
Initial drain current of the field effect transistor | I01-I02 | 20 A ~ 60 Aпри U = 2 В |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 2В |
Input capacitance of field effect transistor | Ciss | 0.35 pF |
Continuous voltage between gate and source | UGS | <2 V |
Continuous voltage between drain and source | UDSS | <4 V |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |