Доход от майнинга

3П344

3П344, 3П344А-2

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter3П344А-2
Noise factor
NF
1.4 dB
Power dissipation
P
<100 mW
Slope of a field effect transistor
S1-S2/I
>15при Iс = 20 мА
Gate leakage current with connected drain and source
IG
1 µAпри Uсз = 2.5В
Continuous voltage between gate and drain
UGD
<7 V
Continuous voltage between gate and source
UGS
<4 V
Continuous voltage between drain and source
UDSS
<4.5 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch