3П343А-2
3П343, 3П343А-2
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Description
Parameters
| Parameter | 3П343А-2 | |
|---|---|---|
Noise factor | NF | 2 dBпри f = 12 ГГц |
Power dissipation | P | <35 mW |
Slope of a field effect transistor | S1-S2/I | >10при Iс = 10 мА |
Initial drain current of the field effect transistor | I01-I02 | <20 Aпри U = 2 В |
Gate leakage current with connected drain and source | IG | 1 µA |
Continuous voltage between gate and drain | UGD | <6 V |
Continuous voltage between gate and source | UGS | <3 V |
Continuous voltage between drain and source | UDSS | <3.5 V |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |